Fabricating non-volatile memory device having a multi-layered ga

Details Fabricating non-volatile memory device having a multi-layered ga Fabricating non-volatile memory device having a multi-layered ga

1995-05-11

1995-10-24

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437242, 437978, 148DIG114, H01L 218247

Patent

active

054609925

ABSTRACT:
A non-volatile memory device with a multi-layered gate electrode structure is fabricated by forming a floating gate electrode and a thermally oxidized silicon film on surfaces inclusive of a surface of the multi-layered gate electrode structure having a control gate electrode, and then forming, by a thermal nitrifying treatment, a thermally nitrified oxidized silicon film at an interface between the thermally oxidized silicon film and the multi-layered gate electrode structure. Diffusion of impurity into a multi-layered gate electrode structure of the memory is prevented and also leakage current due to mismatching at the film interface is reduced.

REFERENCES:
patent: 4980307 (1990-12-01), Ito et al.
patent: 5407870 (1995-04-01), Okada et al.
patent: 5422291 (1995-06-01), Clementi et al.

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