Fabricating method of thin film transistor array substrate

Details Fabricating method of thin film transistor array substrate Fabricating method of thin film transistor array substrate

2011-06-28

2011-06-28

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S149000, C438S153000, C438S199000

Reexamination Certificate

active

07968367

ABSTRACT:
A fabricating method of a TFT array substrate includes following steps: providing a substrate having a pixel region and a bonding pad region surrounding the pixel region; forming a patterned polysilicon layer within the pixel region on the substrate; forming a first patterned insulating layer to cover the patterned polysilicon layer; forming a first patterned transparent conductive layer on the first patterned insulating layer; forming a first metal layer on the first patterned transparent conductive layer; forming a second patterned insulating layer to cover the first metal layer; forming a second patterned transparent conductive layer on the second patterned insulating layer; forming a second metal layer on the second patterned transparent conductive layer; forming a third patterned insulating layer to cover the second metal layer; and forming a third patterned transparent conductive layer on the third patterned insulating layer.

REFERENCES:
patent: 4759610 (1988-07-01), Yanagisawa
patent: 5459595 (1995-10-01), Ishiguro et al.
patent: 5963290 (1999-10-01), Murai et al.
patent: 6421039 (2002-07-01), Moon et al.
patent: 2001/0019372 (2001-09-01), Ootsu et al.

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