Fabricating method of semiconductor light-emitting device

Details Fabricating method of semiconductor light-emitting device Fabricating method of semiconductor light-emitting device

2006-08-24

2009-06-30

Vu, David (Department: 2818)

Radiant energy

Luminophor irradiation

C250S459100, C324S765010, C324S762010

Reexamination Certificate

active

07554100

ABSTRACT:
A fabricating method of a semiconductor light-emitting device includes the step of forming a wafer including a multi-layered semiconductor film epitaxially grown on a base substrate and containing an active layer, the step of performing pass/fail judgment of the active layer by photo-exciting the active layer in the wafer and by measuring emission intensity from the active layer at least at two temperature points, and the step of forming a light-emitting device structure with the multi-layered semiconductor film containing the active layer judged to be of good quality in the pass/fail judgment.

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