Fabricating method of semiconductor device

Details Fabricating method of semiconductor device Fabricating method of semiconductor device

2005-12-30

2008-09-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S426000, C438S425000, C438S424000, C438S508000

Reexamination Certificate

active

07427553

ABSTRACT:
A fabricating method of a semiconductor device is provided. The method comprises the steps of preparing a semiconductor substrate having an active area with a high voltage device area and a low voltage device area and an inactive area, forming a trench in the inactive area of the semiconductor substrate, forming a sacrifice oxide layer on an inner surface of the trench, forming a liner oxide layer on the sacrifice oxide layer, forming a gap-fill oxide layer as a device isolation layer on the liner oxide layer to fill up the trench, forming a buffer oxide layer on top surfaces of the liner and sacrifice oxide layers of the device isolation layer, and forming a gate oxide layer on the high voltage device area of the semiconductor substrate to have a uniform thickness.

REFERENCES:
patent: 2002/0106906 (2002-08-01), Ballantine et al.
patent: 2004/0029398 (2004-02-01), Lee et al.
patent: 2005/0106813 (2005-05-01), Lee et al.
patent: 2006/0258116 (2006-11-01), Kim et al.
patent: 2000-150631 (2000-05-01), None
patent: 2003-060025 (2003-02-01), None
patent: 2003-324146 (2003-11-01), None
patent: 2004-134759 (2004-04-01), None

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