Fabricating method of polycrystalline silicon thin film...

Details Fabricating method of polycrystalline silicon thin film... Fabricating method of polycrystalline silicon thin film...

2005-09-20

2005-09-20

Nguyen, Tranh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S755000

Reexamination Certificate

active

06946402

ABSTRACT:
A fabricating method of a polycrystalline silicon thin film transistor includes forming a polycrystalline silicon layer on a substrate having first and second regions through a crystallization process using nickel silicide (NiSix) as a catalyst, patterning the polycrystalline silicon layer to form an active layer at the first region, leaving a nickel silicide residue at the second region, etching the nickel silicide residue with a solution including hydrofluoric acid (HF) and hydrogen peroxide (H2O2), forming a gate electrode over the active layer and forming a source and drain in the active layer.

REFERENCES:
patent: 5879974 (1999-03-01), Yamazaki
patent: 6294441 (2001-09-01), Yamazaki
patent: 6380007 (2002-04-01), Koyama
patent: 2001/0034088 (2001-10-01), Nakamura et al.
patent: 09-107100 (1997-04-01), None
patent: 2000-252474 (2000-09-01), None

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