Fabricating method of packaging structure

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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Details

C438S382000, C438S396000, C257SE21004, C257SE21008, C257SE21022

Reexamination Certificate

active

07851322

ABSTRACT:
A fabricating method of packaging structure is provided. First, a capacitive element is formed. Then, a first dielectric layer is formed on a first electronic component by performing a build-up process, an interconnection is formed in the first dielectric layer, and a plurality of contacts are formed on the upper and lower surfaces of the first dielectric layer, wherein the capacitive element is embedded in the first dielectric layer during the fabrication of the interconnection and the capacitive element is electrically connected to the corresponding contacts through the interconnection. A second electronic component is disposed on the first dielectric layer, wherein the second electronic component is electrically connected to the corresponding contacts.

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“Office Action of Taiwan counterpart application”, issued on Nov. 6, 2009, p. 1-p. 10.

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