Fabricating method of image sensor

Details Fabricating method of image sensor Fabricating method of image sensor

2008-11-10

2010-11-16

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000

Reexamination Certificate

active

07833817

ABSTRACT:
A method for fabricating an image sensor includes following steps. First, a substrate having semiconductor devices formed thereon is provided. Interlayer insulating films and Interlayer conductive films are formed on the substrate alternately, wherein the interlayer conductive films are electrically connected to the semiconductor devices. Next, isolated photo-diodes are formed on a topmost layer of the interlayer conductive films, wherein one electrode of the isolated photo-diodes is electrically connected to a topmost layer of the interlayer conductive films. A top insulating layer is formed on the topmost layer of the interlayer conductive films, wherein the isolated photo-diodes are covered by the top insulating layer. A top conductive layer is formed in the top insulating layer, wherein the top conductive layer is electrically connected to another electrode of the isolated photo-diodes.

REFERENCES:
patent: 6501065 (2002-12-01), Uppal et al.
patent: 6927432 (2005-08-01), Holm et al.
patent: 7442572 (2008-10-01), Sohn

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