Fabricating method of CMOS image sensor

Details Fabricating method of CMOS image sensor Fabricating method of CMOS image sensor

2005-12-29

2008-11-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S060000, C438S070000, C438S074000, C438S508000, C257S436000

Reexamination Certificate

active

07449359

ABSTRACT:
A fabricating method of a CMOS image sensor is disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The CMOS image sensor includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.

REFERENCES:
patent: 7064405 (2006-06-01), Kondo et al.
patent: 2005/0274968 (2005-12-01), Kuo et al.
patent: 1734745 (2006-02-01), None
patent: 10-20020042098 (2002-06-01), None

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