Fabricating method of a silicon thin film and method for manufac

Details Fabricating method of a silicon thin film and method for manufac Fabricating method of a silicon thin film and method for manufac

1996-07-31

1998-04-28

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437101, 427588, 427593, 427595, 427596, 427527, 136258, 136249, H01L 3120

Patent

active

057443700

ABSTRACT:
A fabricating method of a Si thin film which has no grain boundaries, photo-absorption characteristics similar to those of monocrystalline Si, and a low electrical resistivity, is provided. When electron beams 14 are applied to a deposition material source 12 to deposit the Si thin film on a substrate 10, assist ions are applied from an assist ion source 18 in the direction normal to the surface of the substrate 10.

REFERENCES:
patent: 5089289 (1992-02-01), Ito

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