Fabricating method of a semiconductor device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S604000, C029S606000, C029S609100, C257S531000, C257S664000, C257SE21506, C257SE23010, C336S065000, C336S083000, C336S176000, C336S200000, C336S232000, C438S106000

Reexamination Certificate

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07743482

ABSTRACT:
A semiconductor device and fabricating method thereof are provided. A first substrate with an inductor cell and a through-electrode is connected to a second substrate having an RF device circuit unit. The first substrate can be stacked on the second substrate, and a connecting electrode can electrically connect the inductor cell to the RF device circuit unit.

REFERENCES:
patent: 5903239 (1999-05-01), Takahashi et al.
patent: 6645790 (2003-11-01), Moghe et al.

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