Fabricating method of a pixel structure

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S155000, C438S161000, C438S609000, C257SE21027

Reexamination Certificate

active

07413922

ABSTRACT:
A method of fabricating a pixel structure is disclosed. A substrate having a color filter layer thereon and a leveling layer further covers the color filter layer is provided. A first metal layer is formed over the leveling layer. The first metal layer is patterned to define a source/drain. A channel material layer, a gate insulating layer and a second metal layer are formed over the substrate to cover the source/drain. The second metal layer, the gate insulating layer and the channel material layer are patterned to define a gate and a channel layer. A passivation layer is formed over the substrate to cover the gate. The passivation layer is patterned to expose a portion of the drain. A transparent conductive layer is formed over the substrate, and is electrically connected to the exposed drain. Thereafter, the transparent conductive layer is patterned to form a pixel electrode.

REFERENCES:
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patent: 5915173 (1999-06-01), Kwon
patent: 6080606 (2000-06-01), Gleskova et al.
patent: 6338990 (2002-01-01), Yanai et al.
patent: 7186634 (2007-03-01), Yoneya
patent: 2001/0040645 (2001-11-01), Yamazaki

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