Fabricating method for semiconductor device

Details Fabricating method for semiconductor device Fabricating method for semiconductor device

1997-07-01

2000-05-30

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438297, 438405, H01L 2176

Patent

active

060690550

ABSTRACT:
The fabricating method for semiconductor devices in which the trench technique is employed to perform isolation between devices, and which comprises the steps of sequentially depositing a first film 2, 3 and a second film 4 on top of a silicon substrate 1, forming an element isolation trench 5 in the silicon substrate 1 with masking of the first film 2, 3 and second film 4 which have undergone patterning, and growing a silicon oxide film 6 that is generated by reaction of ozone and tetra-ethyl-ortho-silicate inside the element isolation trench where silicon is exposed.

REFERENCES:
patent: 5399389 (1995-03-01), Konrad et al.
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5491108 (1996-02-01), Mieko et al.
patent: 5506168 (1996-04-01), Morita et al.
patent: 5702977 (1997-12-01), Jang et al.
patent: 5786262 (1998-07-01), Jang et al.
patent: 5795811 (1998-08-01), Kim et al.
Patent Abstracts Of Japan, vol. 015, No. 464 (E-1137), Nov. 25, 1991 & JP 03 198339 A (Handotai Process Kenkyusho:KK), Aug. 29, 1991.

Affiliated with

Also associated with

Rating

Fabricating method for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating method for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating method for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1909684