Fabricating method for semiconductor device

Details Fabricating method for semiconductor device Fabricating method for semiconductor device

1998-05-19

1999-08-17

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438253, 438240, H01L 218242

Patent

active

059406771

ABSTRACT:
In a process where a capacitor using a BST film for a dielectric film is incorporated into a DRAM, the film is selectively removed by wet etching for forming a contact hole. For this purpose, a bottom electrode is formed and then an amorphous film is formed on the entire surface of a silicon wafer. And after forming a crystalline top electrode on this film, lamp heating is performed to crystallize only the area that is in contact with the electrode. Then wet etching is performed using a solution of hydrogen and ammonium fluoride (1:2), which allows removing only the amorphous area selectively.

REFERENCES:
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5580814 (1996-12-01), Larson
S. Yamamichi et al., "An ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with RuO2/Ru/TiN/TiSix storage nodes for Gbit-scale DRAMs," 1995 IEEE, IEDM 95-119 through IEDM 95-122, 1995.
K.P. Lee et al., "A Process Technology for 1 Giga-Bit DRAM," 1995 IEEE, IEDM 95-907 through IEDM 95-910, 1995.

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