Fabricating integrated circuits incorporating high-performance b

Details Fabricating integrated circuits incorporating high-performance b Fabricating integrated circuits incorporating high-performance b

1978-04-17

1980-03-25

Munson, Gene M.

357 34, 357 90, 357 91, H01L 2906, H01L 2972

Patent

active

041953070

ABSTRACT:
A semiconductor device is shown which utilizes a mesa emitter structure in a silicon body. The mesa emitter is formed in the silicon semiconductor body and then passivated on its sidewalls using a suitable dielectric. The base region is formed both under the mesa emitter and adjacent thereto. The emitter-base junction is substantially in one plane and substantially without a sidewall component. Contacts are provided to the emitter and to the base region surrounding the mesa emitter. The resulting structure is such that a base contact can be within a few thousand angstroms of the intrinsic base region.

REFERENCES:
patent: 3677837 (1972-07-01), Ashar
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4045249 (1977-08-01), Hotta
Maheux, "Transistor for Monolithic Circuits," IBM Technical Disclosure Bulletin, vol. 11 (5/69), pp. 1690-1691.

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