Fabricating integrated circuits incorporating high-performance b

Details Fabricating integrated circuits incorporating high-performance b Fabricating integrated circuits incorporating high-performance b

1977-07-25

1978-07-11

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 56, 357 91, H01L 21265, H01L 754

Patent

active

040999874

ABSTRACT:
A method and resulting semiconductor device which utilizes a mesa emitter structure in a silicon body. The mesa emitter is formed in the silicon semiconductor body and then passivated on its sidewalls using a suitable dielectric. The base region is formed both under the mesa emitter and adjacent thereto. The emitter-base junction is substantially in one plane and substantially without a sidewall component. Contacts are provided to the emitter and to the base region surrounding the mesa emitter. The resulting structure is such that a base contact can be within a few thousand angstroms of the intrinsic base region.

REFERENCES:
patent: 3677837 (1972-07-01), Ashar
patent: 3853644 (1974-12-01), Tarui et al.
patent: 4000506 (1976-12-01), Hirai et al.
patent: 4028140 (1977-06-01), Summers et al.
patent: 4045249 (1977-08-01), Hotta
patent: 4047975 (1977-09-01), Widman
R. H. Dennard et al., "Controlling Process for Fabricating Short-Channel FET Device", IBM-TDB, 18, (1976), 2743.
J. A. Archer, "Improved Microwave Transmission Structure", Elect. Letts., 8, (1972), 499.
J. A. Archer, "Low-Noise Implanted Base Microwave Transistors", Solid State Electr., 17, (1974), 387.

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