Fabricating integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

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357 3, 357 75, 357 68, 357 51, H01L 2336, H01L 2312, H01L 2504

Patent

active

046618368

ABSTRACT:
A millimeter wave integrated circuit (MIC) includes both low power components and high power components, e.g. Gunn diodes, disposed on a common semi-insulating semi-conductor substrate. Each high power component is formed in an active epitaxial layer and is provided with a heat sink comprising a thermally conductive material deposited in an opening in the back of the substrate below the compound. The low power components are isolated by an implanted proton layer.

REFERENCES:
patent: 3435306 (1966-11-01), Martin
patent: 3509428 (1967-10-01), Mankarious et al.
patent: 3696272 (1972-10-01), Assour
patent: 3981073 (1976-09-01), Dully
patent: 4091408 (1978-05-01), Lee et al.
patent: 4097890 (1978-06-01), Morris et al.

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