Fabricating high performance integrated bipolar and complementar

Details Fabricating high performance integrated bipolar and complementar Fabricating high performance integrated bipolar and complementar

1975-06-19

1976-05-11

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

357 43, B01J 1700

Patent

active

039552691

ABSTRACT:
A method for fabricating both bipolar as well as complementary MOS field effect transistors, i.e., BI-CMOS transistors in the same semiconductor substrate. The preferred embodiment of the method provides bipolar and CMOS transistors having breakdown voltages (BV.sub.ceo) in excess of 10 volts and CMOS devices having no latchup problems, with a minimum number of processing steps. The method also contemplates the formation of auxiliary devices such as resistors and Schottky Barrier diodes.

REFERENCES:
patent: 3404450 (1968-10-01), Karcher
patent: 3582725 (1971-06-01), Matukura
patent: 3590343 (1971-06-01), Nathanson
patent: 3595714 (1971-07-01), Thire

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