Fabricating dielectric isolation of SOI island side wall for red

Details Fabricating dielectric isolation of SOI island side wall for red Fabricating dielectric isolation of SOI island side wall for red

1991-01-15

1991-10-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 84, 437186, 148DIG150, H01L 21302, H01L 2176

Patent

active

050533533

ABSTRACT:
The conducting layer, such as polysilicon, which electrically connects spaced apart semiconductor islands of a semiconductor-on-insulator, such as sapphire, integrated circuit device is further spaced from the base, sides and upper edges of the islands (identified as sites for origination of undesirable leakage currents during operation) by an underlying insulating layer which may include silicon oxide with a dopant such as phosphorus or boron. During processing, the islands provide a self-masking effect when illumination is first passed through the sapphire substrate to expose photoresist. Refraction of the illumination around the upper edges of the islands provides a convenient way to form the insulating layer so that it lips over the edges and slightly onto the top of the islands.

REFERENCES:
patent: 4174217 (1979-11-01), Flatley
patent: 4649626 (1987-03-01), Leong
patent: 4680603 (1987-07-01), Wei et al.
patent: 4755481 (1988-07-01), Faraone
patent: 4758529 (1988-07-01), Ipri
patent: 4956307 (1990-09-01), Pollock et al.

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