Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2004-04-12
2008-08-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S506000
Reexamination Certificate
active
07411268
ABSTRACT:
Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.
REFERENCES:
patent: 5904540 (1999-05-01), Sheng et al.
Karpov Ilya
Ozzello Tony
Intel Corporation
Pham Long
Trop Pruner & Hu P.C.
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