Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1995-12-22
1999-08-10
Brown, Peter Toby
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438796, 438 37, 438925, 438493, 438933, 438680, 438935, H01L 2100
Patent
active
059372737
ABSTRACT:
A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere for use in crystal growth or a thickness of a stagnant layer of the material gas, using selective growth mask having opening portion consisting of first region having a narrow width and second region having a wide width.
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Ekawa Mitsuru
Fujii Takuya
Kobayashi Hirohiko
Yamamoto Tsuyoshi
Brown Peter Toby
Fujitsu Limited
Pham Long
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