Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Making plural bipolar transistors of differing electrical...
Reexamination Certificate
2010-10-27
2011-12-13
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Making plural bipolar transistors of differing electrical...
C438S369000, C438S514000, C257SE21350, C257SE21608
Reexamination Certificate
active
08076211
ABSTRACT:
A bipolar junction transistor may act as a select device for a semiconductor memory. The bipolar junction transistor may be formed of a stack of base and collector layers. Sets of parallel trenches are formed in a first direction down to the base and in a second direction down to the collector. The trenches may be used to form local enhancement implants into the exposed portion of the base and collector in each trench. As a result of the local enhancement implants, in some embodiments, leakage current may be reduced, active current capability may be higher, gain may be higher, base resistance may be reduced, breakdown voltage may be increased, and parasitic effects with adjacent junctions may be reduced.
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Benvenuti Augusto
Pellizzer Fabio
Pirovano Agostino
Servalli Giorgio
Micro)n Technology, Inc.
Ngo Ngan
Trop Pruner & Hu P.C.
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