Fabricating array with storage capacitor between cell electrode

Details Fabricating array with storage capacitor between cell electrode Fabricating array with storage capacitor between cell electrode

1995-12-29

1998-07-21

Ryan, Patrick

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 35, 349111, H05B 3310

Patent

active

057826650

ABSTRACT:
An array is fabricated in which a cell's dark matrix overlaps its cell electrode so that the overlap areas and the dielectric material between them form a storage capacitor. Each cell's dark matrix can overlap the cell's electrode around its perimeter, and the overlap areas of the dark matrix and the electrode can be sufficiently large and the dielectric layer between them can be sufficiently thin that the storage capacitor they form meets the cell's requirements. The dark matrix can be over the cell electrode, with scan lines and data lines in a series of lower layers, or the dark matrix can be below the series of layers that includes scan lines and data lines, with the cell electrode in an opening defined in the series of layers. The dark matrix layer can be electrically connected to a fixed potential.

REFERENCES:
patent: 4568149 (1986-02-01), Sugata et al.
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4867537 (1989-09-01), Aoki et al.
patent: 5056894 (1991-10-01), Kuijk et al.
patent: 5162933 (1992-11-01), Kakuda et al.
patent: 5339181 (1994-08-01), Kim et al.
patent: 5414547 (1995-05-01), Matsuo et al.
patent: 5432625 (1995-07-01), Morin et al.
patent: 5446562 (1995-08-01), Sato
patent: 5459596 (1995-10-01), Ueda et al.
patent: 5486939 (1996-01-01), Fulks
patent: 5491347 (1996-02-01), Allen et al.
patent: 5499123 (1996-03-01), Mikoshiba
patent: 5510916 (1996-04-01), Takahashi
patent: 5517341 (1996-05-01), Kim et al.
patent: 5517342 (1996-05-01), Kim et al.
patent: 5557534 (1996-09-01), Wu
patent: 5600461 (1997-02-01), Ueda et al.
Matsueda, Y. et al. "HDTV Poly-SI TFT-LCD Light Valve with 70% Aperture Ratio," Conference Proceedings from The 13th International Display Research Conference, Aug. 31-Sep. 3, 1993, Strasbourg, France, pp. 601-605.
U.S. Patent Application No. 08/559,862 entitled "Multiple Gate Polysilicon Structures With Continuously Doped Interchannel Regions", filed on Nov. 20, 1995, Now U.S. Pat. 5,703,382.
U.S. Patent Application No. 08/572,357 entitled Array With Metal Scan Lines Controlling Semiconductor Gate Lines, filed on Dec. 14, 1995, Now U.S. Pat. 5,600,155.
U.S. Patent Application No. 08/367,984 entitled "Circuitry With Gate Line Crossing Semiconductor Line at Two or More Channels", filed on Jan. 3, 1995, Now U.S. Pat. 5,608,557.
U.S. Patent Application No. 08/455,888 entitled "Integrated Dark Matrix For An Active Matrix Liquid Crystal Display And Manufacturing Method", filed on May. 31, 1995, Now U.S. Pat. 5,682,211.
U.S. Patent Application No. 08/453,732 entitled "Active Matrix Liquid Crystal Device and Manufacturing Method", filed on May 30, 1995, Now U.S. Pat. 5,621,556.
U.S. Patent Application No. 08/577,634 entitled "Fabricating Fully Self-Aligned Amorphous Silicon Device", filed on Dec. 22, 1995, Now U.S. Pat. 5,773,804.
U.S. Patent Application No. 08/578,780 entitled "Array With Amorphous Silicon TFTS in Which Channel Leads Overlap Insulating Region No More Than Maximum Overlap (as amended)", filed on Dec. 22, 1995, Now U.S. Pat. 5,717,223.
Suzuki, K., "High-Aperture TFT Array Structures," SID 94 Digest, 1994, pp. 167-170.
Yamanaka, H., Fukunaga, T., Koseki, T., Nagayama, K., and Ueki, T., "Integrated Black Matrix on TFT Arrays," SID 92 Digest, May 1992, pp. 789-792.
Kim, S.S., Jang, I.S., Kim, D.G., and Kim, N.D., "A Fault-Tolerant Architecture for Amorphous Silicon TFT Active-Matrix LCDs," Semi Korea, Flat Panel Display Seminar, Sep. 1995, pp. 119-125.
Ueda, T., Sugahara, J., Toeda, H., Akiyama, M., Ikeda, M., Suzuki, K., "A High-Aperture-Ratio TFT-LCD with a Shield-Electrode Structure," SID 93 Digest, May, 1993, pp. 739-742.

Affiliated with

Also associated with

Rating

Fabricating array with storage capacitor between cell electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating array with storage capacitor between cell electrode , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating array with storage capacitor between cell electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1641476