Fabricating an RC network utilizing alpha tantalum

Details Fabricating an RC network utilizing alpha tantalum Fabricating an RC network utilizing alpha tantalum

1978-12-28

1981-02-17

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

29577C, 29846, 204 38A, C25D 1102, C25D 1118

Patent

active

042513260

ABSTRACT:
Fabricating thin film RC networks (10) includes forming alpha tantalum capacitor base electrodes (14be) on a substrate (12), while simultaneously forming alpha tantalum anodization bus bars (14p and 14s) on the substrate. A portion of each base electrode (14be) then is anodized to form a capacitor dielectric (20) in a single anodizing step. A tantalum nitride resistor film (24) and electrically conductive films (26 and 28) then are deposited on the resultant assembly. Next, portions of the electrically conductive films are removed to define portions of capacitor counterelectrodes (22), to expose sections of the tantalum nitride resistor film (24) destined for use as resistors (24r), and to define conductor networks (30). Portions of the tantalum nitride resistor film (24) then are removed to define capacitor counterelectrode portions (24ce) and the resistors (24r), while simultaneously removing the anodization bus bars (14p and 14s). The resultant networks (10) then are thermally stabilized.

REFERENCES:
patent: 3489656 (1970-01-01), Balde
patent: 3607679 (1971-09-01), Melroy
patent: 3616282 (1971-10-01), Bodway
patent: 3718565 (1973-02-01), Pelletier
patent: 3988824 (1976-11-01), Bodway
patent: 3997411 (1976-12-01), Muenz
patent: 4058445 (1977-11-01), Anders
Proceedings of the 28th Electronics Component Conference, Apr. 1978, pp. 229-233.

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