Fabricating an avalanche photo diode having a step-like distribu

Details Fabricating an avalanche photo diode having a step-like distribu Fabricating an avalanche photo diode having a step-like distribu

1991-04-24

1992-05-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 5, 437149, 437167, 437958, H01L 3118

Patent

active

051148668

ABSTRACT:
Disclosed is a preferable method for producing an avalanche photo diode in which an impurity-doped region having a relatively high concentration and a step-like distribution has a step portion in another impurity-doped region having a relatively low concentration and a gradational distribution so that the circumferential portion of the high concentration region is made shallow in comparison with the central portion of the same, the step portion having a shape so that the radius of curvature thereof varies continuously.

REFERENCES:
patent: 4876209 (1989-10-01), Forrest
patent: 4992386 (1991-02-01), Furuyama et al.
Taguchi et al., "Planar Type InGaAs PLEG-APD for Optical Communication", Shingakugichou, OQE86-183, pp. 71-78.

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