Fabricating a set of semiconducting nanowires, and electric...

Details Fabricating a set of semiconducting nanowires, and electric... Fabricating a set of semiconducting nanowires, and electric...

2004-12-03

2010-11-02

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C977S721000, C257SE21214

Reexamination Certificate

active

07825032

ABSTRACT:
The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.

REFERENCES:
patent: 4518456 (1985-05-01), Bjorkholm
patent: 2002/0130311 (2002-09-01), Lieber et al.
Journal of Physical Chemistry B 2001, 105, 6838-6845 “Characterization of Ultrasmall CdS Nanoparticles Prepared by the Size-Selective Photoetching Technique” Tsukasa Torimoto, Hironori Kontani, Yoshihiro Shibutani, Susumu Kuwabata, Takao Sakata, Hirotaro Mori, and Hiroshi Yoneyama.
“Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching” Hideki Koyama, Applied Physics Letters vol. 80, No. 6, Feb. 11, 2002. pp. 965-967.
“Fabrication of Metal Nanowires Using Microcontact Printing” Matthis Geissler et al. 2003 American Chemical Society Langmuir 2003, 19, 6301-6311.

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