Fabricating a semiconductor with an insulative coating

Details Fabricating a semiconductor with an insulative coating Fabricating a semiconductor with an insulative coating

1994-07-05

1997-01-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Beam leads

257728, 257730, 257925, 257693, 257725, 257702, 257790, H01L 2348

Patent

active

055920225

ABSTRACT:
An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure. A substantially planar first metallic pad is provided for a first connection to external circuitry. The first metallic pad resides on the bottom of the right side portion. The first metallic pad provides a first polarity coupling to the integrated circuit. A method of fabricating the electrical apparatus is also described.

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