Fabricating a semiconductor with an insulative coating

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257728, 257909, 257693, 257725, 257702, H01L 2348, H01L 2946, H01L 2952

Patent

active

055214207

ABSTRACT:
An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure. A substantially planar first metallic pad is provided for a first connection to external circuitry. The first metallic pad resides on the bottom of the right side portion. The first metallic pad provides a first polarity coupling to the integrated circuit. A method of fabricating the electrical apparatus is also described.

REFERENCES:
patent: 3200311 (1965-08-01), Thomas et al.
patent: 3462655 (1969-08-01), Coblenz
patent: 3566214 (1971-02-01), Usuda
patent: 3602982 (1971-09-01), Kooi
patent: 3666588 (1972-05-01), Wanesky
patent: 3686784 (1972-08-01), Engeler et al.
patent: 3746945 (1973-07-01), Normington
patent: 3754169 (1973-08-01), Lyon et al.
patent: 3808470 (1974-04-01), Kniepkamp
patent: 3820235 (1974-06-01), Goldman
patent: 3886578 (1975-05-01), Eastwood et al.
patent: 3905094 (1975-09-01), Ruggiero
patent: 3944447 (1976-03-01), Magdo et al.
patent: 4063176 (1977-12-01), Milligan et al.
patent: 4250520 (1981-02-01), Denlinger
patent: 4278985 (1981-07-01), Stobbs
patent: 4577213 (1986-03-01), Bauhahn
patent: 4738933 (1988-04-01), Richards
patent: 4780424 (1988-10-01), Holler et al.
patent: 4811080 (1989-03-01), Richards
patent: 4855796 (1989-08-01), Wong et al.
patent: 4859629 (1989-08-01), Reardon et al.
patent: 4866499 (1989-09-01), Aktik
patent: 5024966 (1991-06-01), Dietrich et al.
patent: 5034801 (1991-07-01), Fischer
patent: 5045503 (1991-09-01), Kobiki et al.
patent: 5117280 (1992-05-01), Adachi
patent: 5162258 (1992-11-01), Lemnios et al.
patent: 5280194 (1994-01-01), Richards et al.
W. A. Gambling, "Microwave Semiconductor Devices", Electronic Engineering Series, pp. 105-108 (1972).
W. J. Garceau & G. K. Herb, "Modified Beam Load Magnetics For Handling Semiconductors," Western Electric Technical Digest, No. 51, pp. 11-12 (Jul. 1978).
Thomas S. Laverghetta, Solid-State Microwave Devices, pp. 1-117, 178-188 (Artech House, Inc. 1987).
Joseph F. White, Ph.D., Microwave Semiconductor Engneering, pp. vii-xvii, (Van Nostrand Reinhold Company Inc. 1982).
Metalicks Advertisment, p. 262 of Microwaves & RF, vol. 27, No. 5 (May 1988).
M-Pulse Microwave Advertisement, pp. 8-9 of Microwaves & RF, vol. 27, No. 5 (May 1988).
6 sheets of drawings by Alpha Industries, Inc. that refer to "Date Feb. 12, 1990," Jun. 21, 1990.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabricating a semiconductor with an insulative coating does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating a semiconductor with an insulative coating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating a semiconductor with an insulative coating will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-788923

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.