Fabricating a semiconductor photodetector by annealing to smooth

Details Fabricating a semiconductor photodetector by annealing to smooth Fabricating a semiconductor photodetector by annealing to smooth

1990-02-02

1992-03-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437154, 437167, 437956, 437987, 148DIG167, H01L 3118

Patent

active

050988514

ABSTRACT:
A semiconductor photodetector is disclosed which comprises a pn junction formed in a semiconductor substrate and a pair of electrodes for applying a reverse bias to the pn junction, in which at least a part of the junction plane of the pn junction has been metamorphosed by enhanced diffusion. Hence the pn junction from an outer peripheral portion and a central portion is made smooth.

REFERENCES:
patent: 4060427 (1977-11-01), Barile et al.
patent: 4634474 (1987-01-01), Camlibel et al.
Ando et al., IEEE Journal of Quantum Electronics, vol. QE-20, No. 3 (1984), pp. 256-264.

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