Fabricating a semiconductor device with low defect density oxide

Details Fabricating a semiconductor device with low defect density oxide Fabricating a semiconductor device with low defect density oxide

1987-12-28

1989-07-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437247, 437239, 357 2315, 357 54, H01L 21324

Patent

active

048513709

ABSTRACT:
Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First and second layers are formed on a substrate with misaligned defect structures. A third layer is then grown by diffusing a species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides, respectively. The third layer is grown by diffusing oxygen through the first two layers and the interface between the first and second layers acts as a sink trapping defects. The oxide silicon interface has desirable characteristics because the oxide grows in near equilibrium conditions.

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