Fabricating a narrow width EEPROM with single diffusion electrod

Fishing – trapping – and vermin destroying

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437 49, 437979, 148DIG31, 148DIG111, H01L 21265, H01L 2172

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active

050949683

ABSTRACT:
An EEPROM design featuring narrow linear electrodes including a source, a drain, a thin oxide, channel and floating gate. A pair of linear, opposed field oxide barrier walls form widthwise boundaries of the active structure which can be very closely spaced. The drain electrode, implanted in the substrate, abuts both opposed field oxide lateral walls, but does not extend under either wall. The source, drain and channel are formed in a single implant followed by diffusion after the field oxide barrier walls are formed, but prior to formation of the floating gate. All but opposed field oxide walls in a stripe design. A control gate is disposed over the floating gate. The combination of opposed field oxide barrier walls, a stripe electrode design, and single step implant for electrode formation results in a very compact cell, utilizing a simplified EEPROM process.

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Harari et al., "A 256-Bit Nonvolatile Static RAM," 1978 IEEE International Solid State Circuits Conference, Digest of Technical Papers, pp. 108-109.

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