Fabricating a memory cell with an improved capacitor

Details Fabricating a memory cell with an improved capacitor Fabricating a memory cell with an improved capacitor

1990-08-17

1992-10-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437203, 437228, 437233, 437919, H01L 2170

Patent

active

051569930

ABSTRACT:
A process for producing a random access memory cell having an improved capacitor structure that thereby permits greater integration. The capacitor is a merged combination of a stacked trench and a stacked capacitor which has at least two plates separated by a dielectric layer. The plates are formed of polysilicon and extend partially over the gate region, over the source region, over the sidewalls and bottom of a trench, and partially over the field oxide.

REFERENCES:
patent: 4894696 (1990-01-01), Takeda et al.
patent: 4921816 (1990-05-01), Ino

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