Fabricating a low leakage current LED

Details Fabricating a low leakage current LED Fabricating a low leakage current LED

1991-09-30

1992-11-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 23, 437158, 437905, 437969, H01L 2120, H01L 21225

Patent

active

051643294

ABSTRACT:
A method of reducing the leakage current of a III-V compound semiconductor device (10) includes providing the device with a confinement layer having two sections (13, 14). A first section (14) has a higher doping concentration than a second section (13). An energy barrier that confines minority carriers to an active layer (12) of the device (10) is formed by diffusing a dopant into a portion of the active layer (12) and the two sections (13, 14) of the confinement layer. During the diffusion, the conductivity type of a portion of the lower doped second section (13) is inverted while the higher doped first section (14) is not inverted.

REFERENCES:
patent: 4670689 (1987-06-01), Suzuki
patent: 4864369 (1989-09-01), Snyder et al.
patent: 5061656 (1991-10-01), Moyer et al.

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