Fishing – trapping – and vermin destroying
Patent
1995-06-07
1996-11-05
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 70, 437979, H01L 218247
Patent
active
055717365
ABSTRACT:
An EPROM disclosed in this specification includes a unique floating gate memory cell which may be charged using a reduced voltage level. The memory cells are fabricated using a mask to define the buried source, drain, and field oxide regions of the memory cell. After removal of the mask, field oxide regions are formed and a floating gate is fabricated which extends beyond the boundaries of the channel region for the floating gate field effect transistor memory cell. This extended floating gate provides additional capacitive coupling between the gate/word line and the floating gate while maintaining the same capacitive coupling between the floating gate and the channel of the floating gate field effect transistor memory cell. One embodiment discloses a silicide which is applied to the buried source and drain regions. The silicide is fabricated by forming a slot through the field oxide, forming a silicide on the diffused regions, refilling the slot with an oxide, and planarizing the resulting structure.
REFERENCES:
patent: 4184207 (1980-01-01), McElroy
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4222063 (1980-09-01), Rodgers
patent: 4258466 (1981-03-01), Kuo et al.
patent: 4317273 (1982-03-01), Guterman et al.
patent: 4326331 (1982-04-01), Guterman
patent: 4373248 (1983-02-01), McElroy
patent: 4446476 (1984-05-01), Issac
patent: 4451904 (1984-05-01), Sugiura et al.
patent: 4455568 (1984-06-01), Shiota
patent: 4527259 (1985-07-01), Watanabe
patent: 4561004 (1985-12-01), Kuo et al.
patent: 4581622 (1986-04-01), Takasaki
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4763177 (1988-08-01), Paterson
patent: 4780424 (1988-10-01), Holler
patent: 4795722 (1989-01-01), Welch et al.
patent: 4812885 (1989-03-01), Riemenschneider
patent: 4812898 (1989-03-01), Sumihiro
patent: 4814840 (1989-03-01), Kameda
patent: 4833514 (1989-05-01), Esquivel
Armstrong Gregory J.
Paterson James L.
Brady III W. James
Chaudhari Chandra
Donaldson Richard L.
Texas Instruments Incorporated
Valetti Mark A.
LandOfFree
Fabricating a high density EPROM cell by removing a portion of t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabricating a high density EPROM cell by removing a portion of t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating a high density EPROM cell by removing a portion of t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2014637