Fabricating a gallium nitride device with a diamond layer

Details Fabricating a gallium nitride device with a diamond layer Fabricating a gallium nitride device with a diamond layer

2011-08-02

2011-08-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S048000, C438S590000, C438S508000, C257S077000, C257S078000

Reexamination Certificate

active

07989261

ABSTRACT:
In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.

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