Extrusion-free wet cleaning process for copper-dual...

Details Extrusion-free wet cleaning process for copper-dual... Extrusion-free wet cleaning process for copper-dual...

2007-02-06

2007-02-06

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000, C216S105000, C252S079100, C252S079200

Reexamination Certificate

active

10707986

ABSTRACT:
An extrusion-free wet cleaning process for post-etch Cu-dual damascene structures is developed. The process includes the following steps: (1). providing a wafer having a silicon substrate and at least one post-etch Cu-dual damascene structure, the post-etch Cu-dual damascene structure having a via structure exposing a portion of a Cu wiring line electrically connected with an N+diffusion region of the silicon substrate, and a trench structure formed on the via structure; (2). applying a diluted H2O2solution on the wafer to slightly oxidize the surface of the exposed Cu wiring line; (3). washing away cupric oxide generated in the oxidation step by means of an acidic cupric oxide cleaning solution containing diluted HF, NH4F or NH2OH; and (4). providing means for preventing Cu reduction reactions on the Cu wiring line.

REFERENCES:
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patent: 5213622 (1993-05-01), Bohling et al.
patent: 6054061 (2000-04-01), Bayes et al.
patent: 6143657 (2000-11-01), Liu et al.
patent: 6794292 (2004-09-01), Wu

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