Extrinsic semiconductor optical filter

Details Extrinsic semiconductor optical filter Extrinsic semiconductor optical filter

1993-12-23

1995-10-31

Lerner, Martin

Optical: systems and elements

Having significant infrared or ultraviolet property

Multilayer filter or multilayer reflector

257451, 359589, 359590, G02B 520, G02B 528, H01L 3100

Patent

active

054634946

ABSTRACT:
An optical filter (18) includes a first layer (22) of material having a bandgap and being doped with an impurity having an energy level in the bandgap such that the first layer absorbs optical energy below a first wavelength and transmits optical energy thereabove. The filter further includes a second layer of optical material (26) disposed on said first layer (22) which transmits optical energy at a second wavelength, above the first wavelength, and reflects optical energy at a third wavelength above the second wavelength. The first and second layers in combination provide a filter (18) with high transmission in-band, low transmission out-of-band and a sharp cutoff therebetween.

REFERENCES:
patent: 3885855 (1975-05-01), Gross
patent: 4497974 (1985-02-01), Deckman et al.
patent: 4528418 (1985-07-01), McGill
patent: 4581280 (1986-04-01), Taguchi et al.
Kottler et al, "Mixed-Semiconductor Evaporated Films as Filters with Very Sharp Cutoff and Some Possible Applications in Electrooptics," Applied Optics, vol. 17, No. 2, 15 Jan. 1978, pp. 164-165.
Furman et al., "Brief Communications--Long-wavelength Cutoff Filters, Isolating the 14-25 .mu.m Region", Soviet Journal of Optical Technology, vol. 42, No. 12, Dec. 1975, New York, USA.
Seeley, et al., "Far Infrared Filters for the Galileo-Jupiter and Other Missions", 2219 Applied Optics, vol. 20 (1981) Jan., No. 1, New York, USA.

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