Metal treatment – Stock – Ferrous
Patent
1979-05-29
1981-10-27
Edlow, Martin H.
Metal treatment
Stock
Ferrous
357 58, 357 51, 357 41, 357 23, 357 89, 148186, H01L 2904
Patent
active
042977215
ABSTRACT:
A MOSFET random access memory having an extremely low current load memory cell is disclosed. The memory cell comprises a cross-coupled binary stage in which one or more paths to ground can be selectively switched on or off through true and complement data nodes. Impedance means connect a power supply node to the data nodes for charging the data nodes to predetermined voltage levels. The impedance means comprise an intrinsic-extrinsic junction of a substantially pure, intrinsic semiconductor material and a diffusion of extrinsic conductivity impurities disposed within a region of the intrinsic semiconductor material. The impedance means is formed by an isoplanar silicon gate process as an integral portion of a polycrystalline silicon strip which interconnects the power supply node to a data node. A portion of the polycrystalline silicon strip is extended from the data node to form the gate of the transistor to which it is cross-coupled.
REFERENCES:
patent: 4072541 (1978-02-01), Meulenberg, Jr.
patent: 4086611 (1978-04-01), Nishizawa
patent: 4107721 (1978-08-01), Miller
patent: 4187602 (1980-02-01), McElroy
patent: 4210996 (1980-07-01), Amemiya
patent: 4214917 (1980-07-01), Clark
patent: 4225877 (1980-09-01), Miles
Chan Tsiu C.
McKenny Vernon C.
Edlow Martin H.
Mostek Corporation
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