Electricity: power supply or regulation systems – In shunt with source or load – Using a three or more terminal semiconductive device
Reexamination Certificate
2007-06-05
2007-06-05
Han, Jessica (Department: 2838)
Electricity: power supply or regulation systems
In shunt with source or load
Using a three or more terminal semiconductive device
C323S274000, C323S284000, C455S127100
Reexamination Certificate
active
11483942
ABSTRACT:
Switchmode DC-DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based switching transistors may comprise, but are not necessarily limited to, III–V compound semiconductor devices such as gallium arsenide (GaAs) metal-semiconductor field effect transistors (MESFETs) or heterostructure FETs such as high electron mobility transistors (HEMTs). According to an embodiment of the invention, the low figure of merit (FoM), τFET, of the non-Silicon-based switching transistors allows the converters of the present invention to be employed in envelope tracking amplifier circuits of wireless devices designed for high-bandwidth technologies such as, for example, EDGE and UMTS, thereby improving the efficiency and battery saving capabilities of the wireless devices.
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International Search Report for PCT/US2004/006353, filed on Nov. 4, 2004.
Han Jessica
McDermottt Will & Emery LLP
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