Extremely-high frequency semiconductor oscillator using transit

Details Extremely-high frequency semiconductor oscillator using transit Extremely-high frequency semiconductor oscillator using transit

1986-06-17

1988-05-17

Laroche, Eugene R.

Oscillators

With distributed parameter resonator

331107R, 331107DP, 331107T, H03B 714

Patent

active

047453745

ABSTRACT:
An extremely-high frequency semiconductor oscillator which produces a large but substantially noise-free output power with minimized fluctuation of output power for changes in device temperature is realized by using, as its power producing component, a semiconductor transit time diode having a frequency-dependent negative resistance mounted in a cavity resonator of a wave guide means provided with a tuning short at one side of the waveguide means and being designed to perform carrier injection by a combination of tunnel and avalanche phenomena.

REFERENCES:
patent: 3602840 (1971-08-01), Nishizawa
Infrared and Millimeter Waves, vol. 5, Chapter 4, "The GaAs Tunnett Diodes"-Jun-ichi Nishizawa, 1982.
"Impatt Devices for Generation of Millimeter Waves, chapter 2, 1979-H. J. Kuno.

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