Extreme UV light source and semiconductor exposure device

Radiant energy – Radiant energy generation and sources – With radiation modifying member

Reexamination Certificate

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C250S493100, C378S119000

Reexamination Certificate

active

06965117

ABSTRACT:
A UV light source in which Xenon (Xe) gas is mixed with a substance which, in the temperature range in which 10-valent Xe ions (Xe10+) occur, emits a number of free electrons from a molecule or an atom that at least half the number of electrons which are released from a Xe atom, and which at room temperature is molecular or atomic (for example Ar, Kr, Ne, N2and NH3). A high voltage is applied in a pulse-like manner to the electrode on the ground side and the electrode on the high voltage side to produce a plasma with a high temperature and from which extreme UV light with a wavelength of 13.5 nm is formed and emitted. The invention can also be used an extreme UV light source of the capillary, plasma focus, and Z pinch types for example.

REFERENCES:
patent: 6188076 (2001-02-01), Silfvast et al.
patent: 6356618 (2002-03-01), Fornaciari et al.
patent: 6586757 (2003-07-01), Melnychuk et al.
patent: 2003/0006383 (2003-01-01), Melnychuk et al.
patent: 2004/0183037 (2004-09-01), Klein et al.
Thshihisa Tomie, Plasma Source for Extreme Ultraviolet Lithography, Optics, Japanese Joptices Society, 2002, vol. 31, No. 7, pp. 545-552.

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