Radiant energy – Radiant energy generation and sources – With radiation modifying member
Reexamination Certificate
2005-11-15
2005-11-15
Lee, John R. (Department: 2881)
Radiant energy
Radiant energy generation and sources
With radiation modifying member
C250S493100, C378S119000
Reexamination Certificate
active
06965117
ABSTRACT:
A UV light source in which Xenon (Xe) gas is mixed with a substance which, in the temperature range in which 10-valent Xe ions (Xe10+) occur, emits a number of free electrons from a molecule or an atom that at least half the number of electrons which are released from a Xe atom, and which at room temperature is molecular or atomic (for example Ar, Kr, Ne, N2and NH3). A high voltage is applied in a pulse-like manner to the electrode on the ground side and the electrode on the high voltage side to produce a plasma with a high temperature and from which extreme UV light with a wavelength of 13.5 nm is formed and emitted. The invention can also be used an extreme UV light source of the capillary, plasma focus, and Z pinch types for example.
REFERENCES:
patent: 6188076 (2001-02-01), Silfvast et al.
patent: 6356618 (2002-03-01), Fornaciari et al.
patent: 6586757 (2003-07-01), Melnychuk et al.
patent: 2003/0006383 (2003-01-01), Melnychuk et al.
patent: 2004/0183037 (2004-09-01), Klein et al.
Thshihisa Tomie, Plasma Source for Extreme Ultraviolet Lithography, Optics, Japanese Joptices Society, 2002, vol. 31, No. 7, pp. 545-552.
Gurzo Paul M.
Safran David S.
Ushiodenki Kabushiki Kaisha
LandOfFree
Extreme UV light source and semiconductor exposure device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Extreme UV light source and semiconductor exposure device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extreme UV light source and semiconductor exposure device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3464435