Extreme ultraviolet radiation imaging

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C359S361000, C359S350000, C356S237200

Reexamination Certificate

active

06972419

ABSTRACT:
An extreme (EUV) lithography system includes optical elements which vary the wavelengths of radiation as a function of the angle of incidence on a mask to maximize the reflected radiation intensity.

REFERENCES:
patent: 2003/0043370 (2003-03-01), Goldberg
patent: 2003/0058529 (2003-03-01), Goldstein
patent: 2003/0067598 (2003-04-01), Tomie
Yulin et al., “Spectral reflectance tuning of EUV mirrors for metrology applications,”Proc. of SPIE, vol. 5037, 2003, pp. 286-293.

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