Extreme ultraviolet photolithography mask, with resonant...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07842438

ABSTRACT:
The invention relates to extreme ultraviolet photolithography masks that operate in reflection. These masks comprise a lower mirror covering a substrate, and two types of reflecting zones Z1and Z2in order to form a phase shift mask. An etch stop layer is interposed between the lower mirror and an upper reflective structure. This layer has a thickness such that it behaves like a reflective resonant cavity surrounded by the upper and lower reflective structures.

REFERENCES:
patent: 2003/0031937 (2003-02-01), Yan
patent: 2005/0084768 (2005-04-01), Han et al.
patent: 2005/0122589 (2005-06-01), Bakker
Chen H L et al: High Reflectance of Reflective-Type Attenuated-Phase-Shifting Masks for Extreme Ultraviolet Lithography With High Inspection Contrast in Deep Ultraviolet Regimes; J Vac Sci Technol B Microelectron Nanometer Struct; Journal of Vaccum Science and Technology B: Microelectronics and Nanometer Structures Nov./Dec. 2004, vol. 22, No. 6, pp. 3049-3052, XP002408985.
Sang-In et al: “Design and Method of Fabricating Phase Shift Masks for Extreme Ultraviolet Lithography by Partial Etching Into the EUV Multilayer Mirror”; In Proceedings of the SPIE, vol. 5037 (2003).

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