Extreme ultraviolet lithography mask blank and manufacturing met

Details Extreme ultraviolet lithography mask blank and manufacturing met Extreme ultraviolet lithography mask blank and manufacturing met

1999-09-08

2000-09-12

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

378 35, G03F 900

Patent

active

061175978

ABSTRACT:
A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants.

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patent: 5935739 (1999-08-01), Bayer et al.
patent: 5958629 (1999-09-01), Yan et al.

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