Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system
Reexamination Certificate
2006-08-01
2006-08-01
Noori, Max (Department: 2855)
Measuring and testing
Specimen stress or strain, or testing by stress or strain...
Specified electrical sensor or system
Reexamination Certificate
active
07082838
ABSTRACT:
Extraordinary piezoconductance, or change in conductance with strain or pressure, is observed in a hybrid metal-semiconductor device formed from a semiconductor thin film and an adjacent metal shunt fabricated on a semi-insulating substrate. The device includes electrodes for applying a current to the device and for measuring a resulting induced voltage. Strain that is induced in the device, including at the interface between the semiconductor and the metal shunt, changes the resistance at the interface. The device can be used to measure strain or environmental conditions such as pressure or temperature. A sensor using the device includes a frame with a thin membrane on which the device is carried. Deformations in the membrane are transferred to the device to induce strain in the device.
REFERENCES:
patent: 3913213 (1975-10-01), Mills et al.
patent: 4245230 (1981-01-01), Kwok et al.
patent: 4322695 (1982-03-01), Fleming et al.
patent: 4725877 (1988-02-01), Brasen et al.
patent: 5012304 (1991-04-01), Kash et al.
patent: 5526703 (1996-06-01), Aslam et al.
patent: 5663507 (1997-09-01), Westervelt et al.
patent: 6034404 (2000-03-01), Soares
patent: 6066561 (2000-05-01), Kumar et al.
patent: 6338275 (2002-01-01), Soares
patent: 6570750 (2003-05-01), Calcatera et al.
patent: 6707122 (2004-03-01), Hines et al.
C.A. Mead, et al.; “Fermi Level Position at Metal-Semiconductor Interfaces”;Physical Review; vol. 134; No. 3A; pp. A713-A716; (1964).
G. Margaritondo; “Interface states at semiconductor junctions”;Rep. Prog. Phys.; vol. 62; pp. 7650-7808; (1999).
C.S. Gworek, et al.; “Pressure dependence of Cu, Ag, and Fe
-GaAs Schottky barrier heights”;Phy. Rev.B; vol. 64; pp. 045322-1-045322-6; (2001).
Peter Van Vessem et al.; “Rediscovering the Strain Gauge Pressure Sensor”;Sensors; 8 pps.; (1999).
Adhesives List printed from www.tokyosokki.co.jp/e/product . . . ; on Jun. 27, 2003.
Fujidura Semiconductor Pressure Sensors printed from www.fujidura.co.jp/sensor/press/intro . . . on Jun. 27, 2003.
Y. Ohmura; “Piezoresistance Effect in p-Type Semiconductors Si and Ge”; 21stInternational Conference on The Physics of Semiconductors; vol. 1; pp. 273-276; (1992.
T. Zhou, et al.; “Extraordinary magnetoresistance in externally shunted van der Pauw plates”;Applied Physics Letters; vol. 78; No. 5; pp. 667-669; (2001).
S.A. Solin, et al.; Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording:,Applied Physics Letters; vol. 80; No. 21; pp. 4012-4014; (2002).
A.C.H. Rowe, et al.; “A uniaxial tensile stress apparatus for temperature-dependent magnetotransport and optical studies of thin films”;Review of Scientific Instruments; vol. 73; No. 12; pp. 4270-4276; (2002).
S.A. Solin, et al.; “Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors”;Science; vol. 289; pp. 1530-1532; (2000).
Rowe Alistair C. H.
Solin Stuart A.
Davis Octavia
Noori Max
Scully , Scott, Murphy & Presser, P.C.
TDK Corporation
LandOfFree
Extraordinary piezoconductance in inhomogeneous semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Extraordinary piezoconductance in inhomogeneous semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extraordinary piezoconductance in inhomogeneous semiconductors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3660648