Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2005-06-28
2005-06-28
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S663000, C505S239000
Reexamination Certificate
active
06911664
ABSTRACT:
The present invention generally involves an extra-substrate control system comprising a first substrate, attached to which is at least one superconducting structure, and a second substrate, connected to which is at least one element of circuitry, wherein the superconducting structure and the circuitry interact, so that a change in a state of the superconducting structure can be detected by the circuitry. The present invention also provides a quantum computing apparatus comprising a first substrate, attached to which is one or more layers of material, at least one of which is a superconducting material, a second substrate, deposited on which is a flux shield and on the flux shield is at least one element of circuitry, wherein the superconducting material and the second substrate are separated by a mean distance that is small enough to permit coupling between the element of circuitry and the superconducting material.
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Il'ichev Evgeni
Steininger Miles F. H.
Crane Sara
D-Wave Systems Inc.
Lovejoy Brett
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