Externally controlled semiconductor devices with integral thyris

Details Externally controlled semiconductor devices with integral thyris Externally controlled semiconductor devices with integral thyris

1976-06-01

1980-09-23

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 30, 357 39, 357 43, 357 86, 307252C, H01L 2974

Patent

active

042246342

ABSTRACT:
A semi-conductor device includes a semi-conductor body with four layers of alternate P and N conducting types, these layers constituting a thyristor whose outermost layers form emitter junctions with adjacent layers. The semi-conductor body also includes an integrated field effect transistor part for bridging one of the emitter junctions of the thyristor. The source and drain of the field effect transistor include regions of the same conductivity type, one of which forms the emitter layer adjacent to the bridged emitter junction and the other of which comprises a region ohmically connected to the layer adjacent to the emitter layer and of the same type of conductivity as the emitter layer.
The field effect transistor has a control electrode and a protective diode is provided in the semi-conductor body for limiting voltage between the control electrode of the field effect transistor and the semi-conductor body. The thyristor is arranged for optical ignition.

REFERENCES:
patent: 2655610 (1953-10-01), Ebers
patent: 3271700 (1966-09-01), Gutzwiller
patent: 3366802 (1968-01-01), Hilbiber
patent: 3564291 (1971-02-01), Aagard
patent: 3702990 (1974-11-01), Ross
patent: 3719863 (1973-03-01), Ogawa et al.
patent: 3812405 (1974-05-01), Clark
patent: 4012762 (1977-03-01), Abe et al.
H. Eng., "The Field Effect Controlled Switch," Microelectronics, vol. 3, #7, Jul. 1970 pp. 36-38.

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