External cavity type semiconductor laser apparatus

Details External cavity type semiconductor laser apparatus External cavity type semiconductor laser apparatus

1988-03-18

1989-09-05

Sikes, William L.

Coherent light generators

Particular resonant cavity

372 43, 372 36, 372 93, 372 99, 357 81, H01S 308, H01S 318, H01S 304, H01L 2302

Patent

active

048645850

ABSTRACT:
An external cavity type semiconductor laser apparatus comprising a semiconductor laser device and an external reflector, which are mounted on a single mounting base with a distance therebetween, wherein laser light from the light-emitting rear facet of the laser device is reflected by the reflector and returns to the laser device, the coefficient of linear expansion of the mounting base being smaller than that of Cu and being greater than those of both the laser device and the reflector.

REFERENCES:
patent: 4352120 (1982-09-01), Kurihara et al.
Patent Abstracts of Japan (Jul. 3, 1981) 5(103), E-64, 775.
Patent Abstracts of Japan (Sep. 28, 1983) 7(218), E-200, 1363.
Andrews, (1985) Applied Physics Letters 47(2):71-73.
Yamamoto et al., (1987) Journal of Applied Physics 61(3):870-874.
Patent Abstracts of Japan (Mar. 9, 1984), 8(53), E-231, 1490.

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