External cavity semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372101, 372103, H01S 319

Patent

active

050501798

ABSTRACT:
An external cavity semiconductor laser comprising a resonance cavity coupled to a diode laser. The cavity may contain a lens or lens system or may be constructed as an optical waveguide. The external cavity may also contain a nonlinear optical material to produce light of a frequency which is higher than that produced by the semiconductor laser. The use of an external cavity insures the single mode and/or single frequency operation of the semiconductor laser.

REFERENCES:
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Wagner et al., "Operating Characteristics of Single-Quantum-Well Al/GaAs/GaAs High-Power Lasers", Quantum Electronics, 24, Jul. 1988, pp. 1258-1265.
Goldberg et al., "Single Lobe Operation of a 40-Element Laser Array in an External Ring Laser Cavity", Applied Physics Letters, 51, Sep. 1987, pp. 871-873.
Fleming et al., "Spectral Characteristics of External-Cavity Controlled Semiconductor Lasers", Quantum Electronics, QE-17, Jan. 1981, pp. 44-59.
Kogelnick, "Imaging of Optical Modes-Resonators with Internal Lenses", The Bell System Technical Journal, XLIV, Jan. 1865, pp. 455-494.
Wyatt et al., "10 kH.sub.z Linewidth 1.5 m InGaAsP External Cavity Laser with 55 nm Tuning Range", Electronics Letters, 19, Feb. 1983, pp. 110-112.
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Philipp-Rutz, "High-Radiance Room-Temperature GaAs Laser with Controlled Radiation in a Single Transverse Mode", Quantum Electronics, QE-8, Jun. 1972, pp. 632-641.
Chang-Hasnain et al., "High Power with High Efficiency in a Narrow Single-Lobed Beam from a Diode Laser Array in an External Cavity", Applied Physics Letters, 50, Apr. 1987, pp. 1465-1467.
Sharfin et al., "High-Power, Diffraction-Limited, Narrow-Band, External-Cavity Diode Laser", Applied Physics Letters, 54, Feb. 1989, pp. 1731-1733.

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