Coherent light generators – Particular active media – Semiconductor
Patent
1996-10-28
1999-01-12
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
257190, 257191, H01S 319
Patent
active
058598642
ABSTRACT:
An improved semiconductor structure is provided. The semiconductor structure comprises a first layer, the first layer having a restricted growth surface having a region with a transverse dimension D, the first layer having a first lattice constant L.sub.1 ; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical thickness T, and where at least one of the transition layers has lattice constants between L.sub.1 and a second lattice constant L.sub.2 where the first transition layer has a lattice constant closer to the L.sub.1 than L.sub.2 and the last transition layer has a lattice constant closer to the L.sub.2 than L.sub.1 ; and a second layer disposed on the transition region, the second layer having the second lattice constant L.sub.2 ; wherein: the transition region has an average fractional change in lattice constant characterized by .kappa. where .kappa.=D/T){(L.sub.2 -L.sub.1)/L.sub.1 }, where 0<.vertline..kappa..vertline..ltoreq.10 and where D.gtoreq.2 .mu.m.
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Bovernick Rodney B.
Picolight Incorporated
Song Yisun
LandOfFree
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