Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-08-30
1996-11-19
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular biasing
36518528, 36518533, 3651853, G11C 1600
Patent
active
055769926
ABSTRACT:
An extended-life method for soft-programming at least one floating gate memory cell (10) includes connecting the substrate and the source (11) to a reference voltage, then applying to the control gate (13) a soft-programming voltage, the soft-programming voltage being between thirty and sixty percent of the voltage used to hard-program the cell. Increasing voltages are applied to the drain (12), while measuring the current flow into the drain (12). A specific drain (12) voltage, less than or equal to that value of drain (12) voltage at which the current flow into the drain (12) reaches a first peak, is chosen. With the substrate at reference voltage, the cell (10) is soft-programmed by applying to the drain (12) a first voltage slightly less than or equal to the specific drain (12) voltage; by applying to the source (11) a non-negative second voltage less than the specific drain (12) voltage; and by applying to the control gate (13) a third voltage no greater than the soft-programming voltage.
REFERENCES:
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5400286 (1995-03-01), Chu et al.
patent: 5467306 (1995-11-01), Kaya et al.
Donaldson Richard L.
Heiting Leo N.
Lindgren Theodore D.
Nguyen Tan T.
Texas Instruments Incorporated
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